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AP50N04DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP50N04DF
Description  40V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP50N04DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP50N04DF
40V N-Channel Enhancement Mode MOSFET
AP50N04DF REV1.0
永源微電子科技有限公司
Description
The AP50N04DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =50A
RDS(ON) < 18mΩ @ VGS=10V （Type：13mΩ）
Application
VBUS
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50N04DF
PDFN3X3-8L
AP50N04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
50
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
25
A
IDM
Pulsed Drain Current2
180
A
EAS
Single Pulse Avalanche Energy3
313
mJ
IAS
Avalanche Current
25
A
PD@TC=25℃
Total Power Dissipation4
31.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
3
℃
/W


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