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AP70P06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP70P06NF
Description  -60V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP70P06NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP70P06NF
-60V P-Channel Enhancement Mode MOSFET
AP70P06NF RVE 1.1
永源微电子科技有限公司
Description
The AP70P06NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 6V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -60V ID =-70A
RDS(ON) < -14mΩ @ VGS=-10V (Type：11mΩ)
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP70P06NF
PDFN5*6-8L
AP70P06NF XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, -VGS @ -10V1
-70
A
ID@TC=100℃
Continuous Drain Current, -VGS @ -10V1
-42
A
IDM
Pulsed Drain Current2
-280
A
EAS
Single Pulse Avalanche Energy3
484
mJ
IAS
Avalanche Current
41
A
PD@TC=25℃
Total Power Dissipation4
110
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
1.4
℃
/W
RθJC
Thermal Resistance Junction-Case1
62.5
℃
/W


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