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AP75N02DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP75N02DF
Description  20V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP75N02DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP75N02DF
20V N-Channel Enhancement Mode MOSFET
AP75N02DF REV1.0
永源微電子科技有限公司
Description
The AP75N02DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V ID =75A
RDS(ON) < 3.7mΩ@ VGS=4.5V (Type：2.95mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP75N02DF
PDFN3X3-8L
AP75N02DF XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
75
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
49
A
IDM
Pulsed Drain Current note1
360
A
EAS
Single Pulsed Avalanche Energy note2
110
mJ
PD
Power Dissipation
81
W
RθJA
Thermal Resistance Junction-Ambient 1
85
℃/W
RθJC
Thermal Resistance, Junction to Case
1.85
℃/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
℃


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