P75NF758 datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

STB75NF75 - STP75NF75 - STP75NF75FP

Electrical ratings

3/16

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D2PAK /TO-220

TO-220FP

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20KΩ)75

VGS

Gate-source voltage

± 20

(1)

Current limited by package

Drain current (continuous) at TC = 25°C

(1)

Drain current (continuous) at TC=100°C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25°C

300

Derating factor

2.0

0.3

W/°C

dv/dt (3)

ISD ≤80A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting TJ = 25

oC, I

D = 40A, VDD = 37.5V

Single pulse avalanche energy

700

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink (t=1s;TC=25°C)

2000

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

D2PAK /TO-220

TO-220FP

RthJC

Thermal resistance junction-case max

0.5

3.33

°C/W

RthJA

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose(1)

1.6mm from case for 10sec)

300

°C

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