STA333BW datasheet(13/64 Pages) STMICROELECTRONICS

13 / 64 page

STA333BW

Electrical specifications

13/64

3.3

Electrical specifications - digital section

3.4

Electrical specifications - power section

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Iil

Low level input current , no pull-up

resistor

Vi=0 V

-10

µA

Iih

High level input current, no pull-down

resistor

Vi = VDD_DIG

= 3.6 V

-10

µA

Vil

Low level input voltage

0.2 * VDD_DIG

Vih

High level input voltage

0.8 * VDD_DIG

Vol

Low level output voltage

Iol = 2 mA

0.4 * VDD_DIG

Voh

High level output voltage

Ioh = 2 mA

0.8 * VDD_DIG

Ipu

Pull-up current

-25

125

µA

Rpu

Equivalent pull-up resistance

Ω

Table 6.

Electrical characteristics power section

VCC= 18 V, f = 1 kHz, fsw = 384 kHz, Tamb = 25 °C, RL = 8 Ω unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Output power BTL

THD = 1%

THD = 10%

Output power SE

RL = 4 Ω

THD = 1%

THD =

10%

RdsON

Power P-channel/N-channel

MOSFET (total bridge)

ld = 1.5 A

180

250

Ω

Power P-channel RdsON

matching

ld = 1.5 A

Power N-channel RdsON

matching

ld = 1.5 A

Idss

Power P-channel/N-channel

leakage ldss

VCC = 20 V

µA

ILDT

Low-current dead time (static)

Resistive load(1)

IHDT

High-current dead time

(dynamic)

Iload = 1.5 A(1)

Rise time

Resistive load(1)

Fall time

Resistive load(1)

Vcc

Supply voltage operating voltage

4.5

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