M48T212V datasheet(13/32 Pages) STMICROELECTRONICS

13 / 32 page

13/32

M48T212Y, M48T212V

Data Retention Mode

With valid VCC applied, the M48T212Y/V can be

accessed as described above with READ or

WRITE cycles. Should the supply voltage decay,

the M48T212Y/V will automatically deselect, write

protecting itself (and any external SRAM) when

VCC falls between VPFD (max) and VPFD (min).

This is accomplished by internally inhibiting ac-

cess to the clock registers via the E signal. At this

time, the Reset pin (RST) is driven active and will

remain active until VCC returns to nominal levels.

External RAM access is inhibited in a similar man-

ner by forcing E1CON and E2CON to a high level.

This level is within 0.2 volts of the VBAT. E1CON

and E2CON will remain at this level as long as VCC

remains at an out-of-tolerance condition.

When VCC falls below battery back-up switchover

voltage (VSO), power input is switched from the

VCC pin to the SNAPHAT

® battery and the clock

registers and external SRAM are maintained from

the attached battery supply. All outputs become

high impedance. The VOUT pin is capable of sup-

plying 100µA of current to the attached memory

with less than 0.3V drop under this condition. On

power up, when VCC returns to a nominal value,

write protection continues for 200ms (max) by in-

hibiting E1CON or E2CON.

The RST signal also remains active during this

time (see Figure 15., page 26).

Note: Most low power SRAMs on the market to-

day can be used with the M48T212Y/V TIME-

KEEPER® SUPERVISOR. There are, however

some criteria which should be used in making the

final choice of an SRAM to use. The SRAM must

be designed in a way where the chip enable input

disables all other inputs to the SRAM. This allows

inputs to the M48T212Y/V and SRAMs to be

“Don't care” once VCC falls below VPFD(min). The

SRAM should also guarantee data retention down

to VCC = 2.0V. The chip enable access time must

be sufficient to meet the system needs with the

chip enable output propagation delays included.

If the SRAM includes a second chip enable pin

(E2), this pin should be tied to VOUT.

If data retention lifetime is a critical parameter for

the system, it is important to review the data reten-

tion

current

specifications

for

the

particular

SRAMs being evaluated. Most SRAMs specify a

data retention current at 3.0V. Manufacturers gen-

erally specify a typical condition for room temper-

ature along with a worst case condition (generally

at elevated temperatures). The system level re-

quirements will determine the choice of which val-

ue to use.

The data retention current value of the SRAMs can

then be added to the IBAT value of the M48T212Y/

V to determine the total current requirements for

data retention. The available battery capacity for

the SNAPHAT® of your choice can then be divided

by this current to determine the amount of data re-

tention available (see Table 20., page 30).

For a further more detailed review of lifetime calcu-

lations, please see Application Note AN1012.

M48T212V Datasheet(PDF) 13 Page - STMicroelectronics

M48T212V Datasheet(HTML) 13 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

Datasheet Download

Link URL