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M48T248Y Datasheet(PDF) 13 Page - STMicroelectronics

Part # M48T248Y
Description  5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM
PDF  24 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T248Y Datasheet(HTML) 13 Page - STMicroelectronics

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M48T248Y, M48T248V
Table 8. Memory AC Characteristics, M48T248V
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. These parameters are sampled with a 5 pF load are not 100% tested.
3. tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE or WE going low to the earlier of CE or
WE going high.
4. tWR is a function of the latter occurring edge of WE or CE.
5. tDH and tDS are measured from the earlier of CE or WE going high.
Symbol
Parameter(1)
M48T248V–85
Unit
Min
Max
tAVAV
tRC
READ Cycle Time
85
ns
tAVQV
tACC
Access Time
85
ns
tELQV
tCO
Chip Enable Low to Output Valid
85
ns
tGLQV
tOE
Output Enable Low to Output Valid
45
ns
tELQX
tGLQX
tCOE
Chip Enable or Output Enable Low to Output Transition
5
ns
tAXQX
tOH
Output Hold from Address Change
5
ns
tEHQZ
tGHQZ
tOD
(2)
Chip Enable or Output Enable High to Output Hi-Z
35
ns
tWLQZ
tODW
(2)
Output Hi-Z from WE
30
ns
tAVAV
tWC
WRITE Cycle Time
85
ns
tWLWH
tWP1
(3)
WRITE Enable Pulse Width
65
ns
tELEH
tWP2
Chip Enable Pulse Width
75
ns
tAVEL
tAVWL
tAW
Address Setup Time
0
ns
tEHAX
tWR1
(4)
WRITE Recovery Time
15
ns
tWHAX
tWR2
(4)
Address Hold Time from WE
5ns
tWHQX
tOEW
Output Active from WE
5ns
tDVEH
tDVWH
tDS
(5)
Data Setup Time
35
ns
tWHDX
tDH1
(5)
Data Hold Time from WE
0ns
tEHDX
tDH2
(5)
Data Hold Time from CE
15
ns



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