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STP20NM50 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP20NM50
Description  N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20NM50 Datasheet(HTML) 5 Page - STMicroelectronics

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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical characteristics
5/14
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=250 V, ID=10A,
RG=4.7Ω, VGS=10V
(see Figure 14)
24
16
ns
ns
td(off)
tf
Turn-off delay time
Fall time
40
12
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID=20A,
RG=4.7Ω, VGS=10V
(see Figure 16)
9
8.5
23
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
VSD
(2)
2.
Pulsed: pulse duration 300µs duty cycle 1.5%
Forward on voltage
ISD=20A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj= 25°C
(see Figure 16)
350
4.6
26
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj=150°C
(see Figure 16)
435
5.9
27
ns
µC
A



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