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2SB596 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB596 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Silicon PNP Power Transistor 2SB596 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -1.7V(Max) @IC=-3A APPLICATIONS · For power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -0.4 A PC Total Power Dissipation 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃ /W |
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