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M58BW016DB Datasheet(PDF) 26 Page - STMicroelectronics |
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M58BW016DB Datasheet(HTML) 26 Page - STMicroelectronics |
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26 / 63 page  M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB 26/63 Register bit 4 is set to '1' if there has been a pro- gram failure. Programming aborts if VPP drops out of the al- lowed range or RP goes to VIL. A Read Memory Array command must be issued to return the memory to read mode before issuing any other commands. Once the code has been changed a device reset or power-down will make the protection active with the new code. See Appendix B, Figure 25, 26 and 27 for suggest- ed flowcharts for using the Tuning Protection Pro- gram command. Table 9. Commands Note: 1. X Don’t Care; RA Read Address, RD Read Data, ID Device Code, SRD Status Register Data, PA Program Address; PD Program Data, QA Query Address, QD Query Data, BA Any address in the Block, BCR Burst Configuration Register value, TPA = Tuning Protection Address, TPC = Tuning Protection Code. 2. Cycles 1 and 2 input the first 32 bits of the code, cycles 3 and 4 the second 32 bits of the code. Command Bus Operations 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle Op. Addr. Data Op. Addr. Data Op. Addr. Data Op. Addr. Data Read Memory Array ≥ 2 Write X FFh Read RA RD Read Electronic Signature (Manufacturer Code) ≥ 2 Write X 90h Read 00000h 20h Read Electronic Signature (Device Code) ≥ 2 Write X 90h Read 00001h IDh Read Electronic Signature (Burst Configuration Register) ≥ 2 Write X 90h Read 00005h BCRh Read Status Register 2 Write X 70h Read X SRDh Read Query ≥ 2 Write X 98h Read QAh QDh Clear Status Register 1 Write X 50h Block Erase 2 Write X 20h Write BAh D0h Program 2 Write X 40h 10h Write PA PD Program/Erase Suspend 1 Write X B0h Program/Erase Resume 1 Write X D0h Set Burst Configuration Register 2 Write X 60h Write BCRh 03h Tuning Protection(2) Program 4 Write X 48h Write TPAh TPCh Write X 48h Write TPAh TPCh Tuning Protection Unlock(2) 4 Write X 78h Write TPAh TPCh Write X 78h Write TPAh TPCh |
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