M58LW032C datasheet(25/61 Pages) STMICROELECTRONICS

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M58LW032C

Figure 8. Protection Register Memory Map

Table 9. Program, Erase Times and Program Erase Endurance Cycles

Note: 1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Effective byte programming time 6µs, effective word programming time 12µs.

4. Maximum value measured at worst case conditions for both temperature and VDD after 100,000 program/erase cycles.

5. Maximum value measured at worst case conditions for both temperature and VDD.

Parameters

M58LW032C

Unit

Min

Typ(1,2)

Max(2)

Block (1Mb) Erase

1.2

4.8(4)

Chip Program (Write to Buffer)

72(4)

Chip Erase Time

110 (4)

Program Write Buffer

192 (3)

576 (4)

µs

Word/Byte Program Time

(Word/Byte Program command)

48 (4)

µs

Program Suspend Latency Time

20 (5)

µs

Erase Suspend Latency Time

25 (5)

µs

Block Protect Time

30 (5)

µs

Blocks Unprotect Time

0.75

1.2 (5)

Program/Erase Cycles (per block)

100,000

cycles

Data Retention

years

AI05501

User Programmable

Unique device number

Protection Register Lock

88h

85h

84h

81h

80h

WORD

ADDRESS

M58LW032C Datasheet(PDF) 25 Page - STMicroelectronics

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