RA4M2 datasheet(74/93 Pages) RENESAS

74 / 93 page

Table 2.44

Code flash memory characteristics (2 of 2)

Conditions: Program or erase: FCLK = 4 to 50 MHz

Read: FCLK ≤ 50 MHz

Parameter

Symbol

FCLK = 4 MHz

20 MHz ≤ FCLK ≤ 50 MHz

Unit

Test

conditions

Min

Typ*6 Max Min

Typ*6

Max

Programming time

NPEC > 100 times

128-byte

tP128

—

0.91

15.8 —

0.41

7.2

8-KB

tP8K

—

212

—

32-KB

tP32K

—

234

848

—

106

384

Erasure time

NPEC ≤ 100 times

8-KB

tE8K

—

216

—

120

32-KB

tE32K

—

283

864

—

157

480

Erasure time

NPEC > 100 times

8-KB

tE8K

—

260

—

144

32-KB

tE32K

—

341

1040 —

189

576

Reprogramming/erasure cycle*4

NPEC

10000*1 —

—

10000*1

—

Times

Suspend delay during programming

tSPD

—

264

—

120

µs

Programming resume time

tPRT

—

110

—

µs

First suspend delay during erasure in suspend

priority mode

tSESD1

—

216

—

120

µs

Second suspend delay during erasure in suspend

priority mode

tSESD2

—

1.7

—

1.7

Suspend delay during erasure in erasure priority

mode

tSEED

—

1.7

—

1.7

First erasing resume time during erasure in suspend

priority mode*5

tREST1

—

1.7

—

1.7

Second erasing resume time during erasure in

suspend priority mode

tREST2

—

144

—

µs

Erasing resume time during erasure in erasure

priority mode

tREET

—

144

—

µs

Forced stop command

tFD

—

µs

Data hold time*2

tDRP

10*2 *3

—

10*2 *3

—

Years

Note 1. This is the minimum number of times to guarantee all the characteristics after reprogramming. The guaranteed range is from 1 to

the minimum value.

Note 2. This indicates the minimum value of the characteristic when reprogramming is performed within the specified range.

Note 3. This result is obtained from reliability testing.

Note 4. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 10,000),

erasing can be performed n times for each block. For example, when 128-byte programming is performed 64 times for different

addresses in 8-KB blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming

the same address several times as one erasure is not enabled. Overwriting is prohibited.

Note 5. Time for resumption includes time for reapplying the erasing pulse (up to one full pulse) that was cut off at the time of suspension.

Note 6. The reference value at VCC = 3.3V and room temperature.

RA4M2 Datasheet

2. Electrical Characteristics

R01DS0367EJ0140 Rev.1.40

May 9, 2025

Page 74 of 93

RA4M2 Datasheet(PDF) 74 Page - Renesas Technology Corp

RA4M2 Datasheet(HTML) 74 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93

Datasheet Download

Link URL