STN4NF03L datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STN4NF03L

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS = max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2 A

VGS = 5 V, ID= 2 A

0.039

0.046

0.05

0.06

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS = 10 V, ID = 1 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz, VGS = 0

330

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 24 V, ID = 4 A

VGS =10 V

(see Figure 14)

6.5

3.2

9nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

rise time

VDD = 15 V, ID= 2 A,

RG = 4.7 Ω, VGS = 4.5 V

(see Figure 15)

100

td(off)

Turn-off-delay time

fall time

VDD = 15 V, ID = 2 A,

RG = 4.7 Ω, VGS = 4.5 V

(see Figure 15)

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