AP30G120SW datasheet(1/3 Pages) AOSMD

Part #	AP30G120SW

Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD

PDF	3 Pages

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 3 page

Advanced Power

N-CHANNEL INSULATED GATE

Electronics Corp.

Features

▼ High speed switching

▼ Low Saturation Voltage

VCE(sat)=3.0V@IC=30A

Absolute Maximum Ratings

, 1/8" from case for 5 seconds .

Notes:

1.Repetitive rating : Pulse width limited by max . junction temperature .

Thermal Data

Symbol

Rthj-c(IGBT)

Rthj-c(Diode)

Rthj-a

Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Min.

Typ.

Max. Units

BVCES

1200

-

V

IGES

-

±500

nA

ICES

--

1

mA

VCE(sat)

-

3

3.6

V

-

3.8

-

V

VGE(th)

3

4.4

7

V

Qg

-55

88

nC

Qge

-12

-

nC

Qgc

-27

-

nC

td(on)

-20

-

ns

tr

-20

-

ns

td(off)

-65

-

ns

tf

-

200

300

ns

Eon

-

1.8

-

mJ

Eoff

-

1.1

-

mJ

Cies

-

1320 2110

pF

Coes

-

105

-

pF

Cres

-9-

pF

VF-1

-

1.7

2

V

VF-2

-

1.8

2.4

V

trr

-80

-

ns

Qrr

-22

-

nC

Data and specifications subject to change without notice

BIPOLAR TRANSISTOR WITH FRD.

℃

Maximum Lead Temp. for Soldering Purposes

300

Gate-Emitter Voltage

Continuous Collector Current

A

Reverse Transfer Capacitance

TSTG

Gate-Collector Charge

Total Gate Charge

Parameter

Gate-to-Emitter Leakage Current

Turn-on Delay Time

℃

/W

℃

/W

Thermal Resistance Junction-Case

Parameter

Value

0.6

Thermal Resistance Junction-Case

1.6

℃

/W

A

AP30G120SW

Symbol

VCES

1200V

Rating

Collector-Emitter Voltage

Units

V

1200

f=1.0MHz

-55 to 150

VGE=15V, IC=30A

VCE=VGE, IC=1mA

IC=30A

VGE=±30V, VCE=0V

VGE=0V, IC=250uA

40

VGE=0V

W

℃

VCC=500V

Maximum Power Dissipation

Test Conditions

Storage Temperature Range

208

Collect-to-Emitter Breakdown Voltage

℃

Units

VGE=15V

Thermal Resistance Junction-Ambient

▼ RoHS Compliant

Output Capacitance

Input Capacitance

PD@TC=25℃

TJ

ICM

VCE=30V

Parameter

200630061-1/3

Pb Free Plating Product

Operating Junction Temperature Range

Gate-Emitter Charge

Gate Threshold Voltage

Collector-Emitter Saturation Voltage

Collector-Emitter Leakage Current

VGE=15V, IC=60A

TL

VCE=1200V, VGE=0V

Reverse Recovery Time

IF=10A

Reverse Recovery Charge

di/dt = 100 A/µs

Forward Voltage

IF=10A

Forward Voltage

IF=20A

IC@TC=100℃

IC@TC=25℃

Continuous Collector Current

Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified)

VCC=600V,

Ic=30A,

VGE=15V,

RG=5Ω,

Inductive Load

Rise Time

Turn-off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

75

A

▼ CO-PAK, IGBT with FRD

IF@TC=100℃

IFM

Diode Continunous Forward Current

Diode Pulse Forward Current

Pulsed Collector Current

1

VGE

30A

VCES

IC

12

V

160

A

±30

30

60

G

C

E

TO-3P

G

C

E

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