MJD31C datasheet(1/5 Pages) STMICROELECTRONICS

Part #	MJD31C

Description	COMPLEMENTARY SILICON POWER TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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MJD31B/31C

MJD32B/32C

COMPLEMENTARY SILICON POWER TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s

ELECTRICALLY SIMILAR TO TIP31B/C AND

TIP32B/C

APPLICATIONS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER TRANSISTORS

DESCRIPTION

The MJD31B and MJD31C and the MJD32B and

MJD32C form complementary NPN-PNP pairs.

They are manufactured using Epitaxial Base

technology for cost-effective performance.

®

INTERNAL SCHEMATIC DIAGRAM

May 1999

1

3

DPAK

TO-252

(Suffix ”T4”)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

NPN

MJD31B

MJD31C

PNP

MJD32B

MJD32C

VCBO

Collect or-Base Voltage (IE =0)

80

100

V

VCEO

Collect or-Emitter Voltage (IB =0)

80

100

V

VEBO

Emitter-Base Voltage (IC =0)

5

V

IC

Collect or Current

3

A

ICM

Collect or Peak Current

5

A

IB

Base Current

1

A

Ptot

Tot al Dissipation at Tc =25

oC15

W

Tstg

Storage T emperat ure

-65 t o 150

oC

Tj

Max. O perating Junction Temperature

150

oC

For PNP types the values are intented negative.

1/5

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