MJD50

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

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STMicroelectronics PREFERRED

SALESTYPE

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HIGH VOLTAGE CAPABILITY

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SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

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ELECTRICALLY SIMILAR TO TIP50

APPLICATIONS

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SWITCH MODE POWER SUPPLIES

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AUDIO AMPLIFIERS

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GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD50 is manufactured using Medium

Voltage Epitaxial Planar technology, resulting in a

rugged high performance cost-effective transistor.

INTERNAL SCHEMATIC DIAGRAM

January 2000

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

500

V

400

V

5

V

Collector Current

1

A

2

A

Base Current

0.6

A

1.2

A

W

St orage Temperature

-65 to 150

Max. Operating Junction T emperature

150

1

3

DPAK

TO-252

(Suffix ”T4”)

®

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