MMBT2907A datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

• Thermal Resistance Junction-Ambient

Max

357.1

oC/W

• Device mounted on a PCB area of 1 cm2

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = -3 V)

VCE = -30 V

-50

IBEX

Base Cut-off Current

(VBE = -3 V)

VCE = -30 V

-50

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -50 V

-10

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -10 mA

-60

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -10

µA

-60

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = -10

µA

-5

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -150 mA

IB = -15 mA

IC = -500 mA

IB = -50 mA

-0.4

-1.6

VBE(sat)

∗ Collector-Base

Saturation Voltage

IC = -150 mA

IB = -15 mA

IC = -500 mA

IB = -50 mA

-1.3

-2.6

hFE

∗

DC Current Gain

IC = -0.1 mA

VCE = -10 V

IC = -1 mA

VCE = -10 V

IC = -10 mA

VCE = -10 V

IC = -150 mA

VCE = -10 V

IC = -500 mA

VCE = -10 V

100

300

Transition Frequency

IC = -50 mA VCE = -20V f = 100MHz

200

MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = -10 V

f = 1 MHz

CEBO

Emitter-Base

Capacitance

IC = 0

VEB = -2 V

f = 1 MHz

Delay Time

IC = -150 mA

IB = -15 mA

VCC = -30V

Rise Time

ton

Switching On Time

Storage Time

IC = -150 mA

IB1 = -IB2 = -15mA

VCC = -30V

190

Fall Time

toff

Switching Off Time

220

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

MMBT2907A

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