MMBT3906 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

• Thermal Resistance Junction-Ambient

Max

357.1

oC/W

• Device mounted on a PCB area of 1 cm2

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = 3 V)

VCE = -30 V

-50

IBEX

Collector Cut-off

Current (VBE = 3 V)

VCE = -30 V

-50

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -1 mA

-40

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -10

µA

-60

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = -10

µA

-6

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -10 mA

IB = -1 mA

IC = -50 mA

IB = -5 mA

-0.25

-0.4

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -10 mA

IB = -1 mA

IC = -50 mA

IB = -5 mA

-0.65

-0.85

-0.95

hFE

∗

DC Current Gain

IC = -0.1 mA

VCE = -1 V

IC = -1 mA

VCE = -1 V

IC = -10 mA

VCE = -1 V

IC = -50 mA

VCE = -1 V

IC = -100 mA

VCE = -1 V

100

300

Transition Frequency

IC = -10mA VCE = -20 V f = 100MHz

250

MHz

Noise Figure

VCE = -5 V

IC = -0.1 mA

f = 10 Hz

to 15.7 KHz

RG = 1 K

Ω

4dB

CCBO

Collector-Base

Capacitance

IE = 0

VCB = -5 V

f = 100 KHz

CEBO

Emitter-Base

Capacitance

IC = 0

VEB = -0.5 V

f = 100 KHz

Delay Time

IC = -10 mA

IB = -1 mA

VCC = -3V

Rise Time

Storage Time

IC = -10 mA

IB1 = -IB2 = -1 mA

VCC = -3V

225

Fall Time

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

MMBT3906

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