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KSH112 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # KSH112
Description  Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSH112 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Darlington Power Transistor
KSH112
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= -100V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat): -3.0V(Max) @IC= -4A
APPLICATIONS
· Switching Regulators
· Converters
· Power Amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Pulse
4
A
PC
Collector Power Dissipation
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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