SD2918

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

ADVANCE DATA

s

GOLD METALLIZATION

s

EXCELLENT THERMAL STABILITY

s

COMMON SOURCE CONFIGURATION

s

MHz

DESCRIPTION

The SD2918 is a gold metallized N-Channel MOS

field-effect RF power transistor. It is intended for

use in 50 V DC large signal applications up to

200 MHz

PIN CONNECTION

November 1999

Symbol

Parameter

Val ue

Uni t

Drain Source Voltage

125

V

Ω)

125

V

Gat e-Source Volt age

±20

V

Drain Current

6

A

Power Dissipation

175

W

Max. O perating Junction Temperature

200

Storage T emperat ure

-65 to 150

THERMAL DATA

Junction-Case Thermal Resistance

Case-Heatsink T hermal Resist ance

∗

1.0

0.30

* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

M113

epoxy sealed

®

ORDER CODE

BRANDING

SD2918

TSD2918

1. Drain

3.Gate

2. Source

4. Source

1/8