74HC_HCT03

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© NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet

Rev. 4 — 27 November 2015

5 of 14

NXP Semiconductors

74HC03; 74HCT03

Quad 2-input NAND gate; open-drain output

10. Dynamic characteristics

ICC

supply current

VI = VCC or GND; IO =0A;

VCC =5.5 V

--

2.0

-

20

-

40

A

I

CC

additional

supply current

per input pin;

VI =VCC  2.1 V; IO =0A;

other inputs at VCC or GND;

VCC = 4.5 V to 5.5 V

-

100

360

-

450

-

490

A

CI

input

capacitance

-3.5

-

-

-

-

-

pF

Table 6.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

25

C

40 C to +85 C 40 C to +125 C Unit

Min

Typ

Max

Min

Max

Min

Max

Table 7.

Dynamic characteristics

GND = 0 V; CL = 50 pF; for test circuit, see Figure 7.

Symbol Parameter

Conditions

25

C

40 C to +125 C Unit

Min

Typ

Max

Max

(85

C)

Max

(125

C)

74HC03

tpd

propagation delay

nA, nB to nY; see Figure 6

[1]

VCC = 2.0 V

-

28

95

120

145

ns

VCC = 4.5 V

-

10

19

24

29

ns

VCC = 5.0 V; CL =15pF

-

8

-

-

-

ns

VCC = 6.0 V

-

8

16

20

25

ns

tt

transition time

see Figure 6

[2]

VCC = 2.0 V

-

19

75

95

110

ns

VCC = 4.5 V

-

7

15

19

22

ns

VCC = 6.0 V

-

6

13

16

19

ns

CPD

power dissipation

capacitance

per package; VI =GND to VCC

[3]

-4-

-

-

pF