MMBT4401 datasheet(2/3 Pages) TAITRON

2 / 3 page

Rev. A/AH 2008-03-25

MMBT4401

SMD General Purpose Transistor (NPN)

www.taitroncomponents.com

Page 2 of 3

Electrical Characteristics (T

Ambient=25ºC unless noted otherwise)

Symbol

Description

Min.

Max.

Unit

Conditions

VCE=1V, IC=0.1mA

VCE=1V, IC=1mA

VCE=1V, IC=10mA

100

300

VCE=1V, IC=150mA

hFE

D.C. Current Gain

VCE=2V, IC=500mA

V(BR)CBO

Collector-Base Breakdown Voltage

IC=0.1mA, IE=0

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=1mA, IB=0

V(BR)EBO

Emitter-Base Breakdown Voltage

6.0

IE=0.1mA, IC=0

0.40

IC=150mA, IB=15mA

VCEsat

Collector-Emitter Saturation Voltage

0.75

IC=500mA, IB=50mA

0.75

0.95

IC=150mA, IB=15mA

VBEsat

Base-Emitter Saturation Voltage

1.20

IC=500mA, IB=50mA

ICEV

Collector Cut-off Current

0.1

µA

VEB=0.4V, VCE=35V

IBEV

Base Cut-off Current

0.1

µA

VEB=0.4V, VCE=35V

hie

Input Impedance

1.0

kΩ

VCE=10V, IC=1mA

f=1KHz,

hre

Voltage Feedback Ratio

0.1

8.0

x10

VCE=10V, IC=1mA

f=1KHz,

hoe

Output Admittance

1.0

μS

VCE=10V, IC=1mA

f=1KHz,

hfe

Small Signal Current Gain

500

VCE=10V, IC=1mA

f=1KHz,

Current Gain-Bandwidth Product

250

MHz

VCE=10V, IC=20mA,

f=100MHz

CCBO

Output Capacitance

6.5

VCB=5V, f=1.0MHz,

IE=0

CEBO

Input Capacitance

VEB=0.5V, f=1.0MHz,

IC=0

Delay Time

Rise Time

IB1=15mA

IC=150mA

VCC=30V

VEB=2V

Storage Time

225

Fall Time

IB1=IB2=15mA

IC=150mA

VCC=30V

*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%

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