STB3NB60 datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

1.56

oC/W

Rthj- amb

Rthc-si nk

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current, Repetitive or Not -Repet itive

(pulse width limited by Tj max)

3.3

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

100

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID =250

µAVGS =0

600

IDSS

Zero G ate Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc =125

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate Threshold

Voltage

VDS =VGS

ID =250

µA

45V

RDS( on)

St atic Drain-source On

Resistance

VGS =10V

ID = 1.6 A

3.3

3.6

Ω

ID(o n)

On St ate Drain Current

VDS >ID(on) xRDS(on) max

VGS =10 V

3. 3

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconduct ance

VDS >ID(on) xRDS(on)max

ID =1.6 A

1. 2

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse T ransfer

Capacitance

VDS =25 V

f = 1 MHz

VGS = 0

400

520

STB3NB60

2/9

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