EMLS232TA datasheet(6/14 Pages) EMLSI

6 / 14 page

Rev 0.3

EMLS232TA Series

512K x 32 x 4Banks Low Power SDRAM

ABSOLUTE MAXIMUM RATINGS

NOTE :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25oC~ 85oC for Extended, 0oC~ 70oC for Commercial)

NOTE :

1. Under all conditions VDDQ must be less than or equal to VDD.

2.VIH (max) = 4.3V AC. The overshoot voltage duration is

3.VIL (min) = -1.5V AC. The undershoot voltage duration is

3 .

4.Any input 0V

VIN

VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

5.Dout is disabled, 0V

VOUT

VDDQ.

CAPACITANCE

(VDD = 2.8V, TA = 23 , f=1 , VREF =0.9V

)

Parameter

Symbol

Value

Unit

Voltage on any pin relative to VSS

VIN,VOUT

-1.0 ~ 4.0

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 4.0

Storage temperature

TSTG

-55 ~ +150

Power dissipation

1.0

Short circuit current

IOS

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

VDD

2.6

2.8

3.0

VDDQ

2.6

2.8

3.0

Input logic high voltage

VIH

0.8 x VDDQ

2.8

VDDQ + 0.3

Input logic low voltage

VIL

-0.3

0.3

Output logic high voltage

VOH

0.9 x VDDQ

IOH = -0.1

Output logic low voltage

VOL

0.2

IOL = 0.1

Input leakage current

ILI

-2

Symbol

Min

Max

Unit

Note

Clock

CCLK

1.5

3.5

RAS, CAS, WE, CS, CKE, DQM0~DQM3

CIN

1.5

3.0

Address

CADD

1.5

3.0

DQ0 ~ DQ31

COUT

2.0

4.5

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