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STB75NE75 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB75NE75 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STB75NE75 N - CHANNEL 75V - 0.01 Ω - 75A - D2PAK STripFET ™ POWER MOSFET s TYPICAL RDS(on) = 0.01 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE s ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ™” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ® INTERNAL SCHEMATIC DIAGRAM March 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it VDS Drain-source Voltage (VGS =0) 75 V VDGR Drain- gate Voltage (RGS =20 k Ω)75 V VGS G ate-source Volt age ± 20 V ID Drain Current (continuous) at Tc =25 oC75 A ID Drain Current (continuous) at Tc =100 oC53 A IDM ( •) Drain Current (pulsed) 300 A Ptot T otal Dissipat ion at Tc =25 oC 160 W Derating Factor 1.06 W / o C dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 75 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STB75NE75 75 V <0.013 Ω 75 A 1 3 D 2PAK TO-263 (suffix ”T4”) 1/8 |
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