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STB85NF55 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB85NF55
Description  N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET™ II POWER MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB85NF55 Datasheet(HTML) 3 Page - STMicroelectronics

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STB85NF55/STP85NF55
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 40 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
25
100
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=30V ID=80A VGS=10V
(see test circuit, Figure 4)
120
30
45
150
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 30 V
ID = 40 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
70
35
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
VSD (*)
Forward On Voltage
ISD = 80 A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A
di/dt = 100A/µs
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
75
210
5.5
ns
nC
A
Thermal Impedance
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area



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