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MJD122 Datasheet(PDF) 1 Page - STMicroelectronics |
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MJD122 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  October 2007 Rev 10 1/9 9 Table 1. Device summary Order code Marking Package Packaging MJD122T4 MJD122 TO-252 (DPAK) Tape & reel MJD122-1 MJD122 TO-251 (IPAK) Tube MJD122 Low voltage power Darlington transistor Features ■ Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 (IPAK) power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”) Applications ■ General purpose switching and amplifier Description The device is manufactured using Epitaxial-base technology for high performance. PNP type is MJD127. Figure 1. Internal schematic diagram TO-251 IPAK 3 2 1 1 3 (suffix “-1”) TO-252 DPAK (suffix “T4”) R1 typ. =10 KW R2 typ. =150 W www.st.com |
Similar Part No. - MJD122_07 |
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Similar Description - MJD122_07 |
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