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STB14NK60Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB14NK60Z
Description  N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB14NK60Z Datasheet(HTML) 3 Page - STMicroelectronics

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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 6 A
0.45
0.5
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID= 6 A
11
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2220
240
57
pF
pF
pF
Coss eq. (3) Equivalent Output Capacitance
VGS = 0V, VDS = 0V to 480V
122
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 6 A,
RG= 4.7
Ω, VGS = 10 V
(Resistive Load see, Figure 21)
26
18
62
13
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 12 A,
VGS = 10V
(see, Figure 24)
75
13.2
38.6
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
12
48
A
A
VSD (1)
Forward On Voltage
ISD = 12 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 25°C
(see test circuit, Figure 22)
490
4.7
19.3
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see test circuit, Figure 22)
664
6.8
20.5
ns
µC
A



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