L6713ATR datasheet(14/64 Pages) STMICROELECTRONICS

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Electrical characteristics

L6713A

14/64

Reference and DAC

kVID

Output voltage accuracy

Intel mode

VID = 1.000 V to VID = 1.600 V

FB = VOUT; FBG = GNDOUT

-0.5

0.5

AMD mode

VID = 1.000 V to VID = 1.550 V

FB = VOUT; FBG = GNDOUT

-0.6

0.6

VBOOT

Boot voltage

Intel mode

1.081

IVID

VID pull-up current

Intel mode; VIDx to SGND

μA

VID pull-down current

AMD mode; VIDx to 5.4 V

12.5

μA

VIDIL

VID thresholds

Intel mode; Input low

AMD mode; Input low

0.3

0.8

VIDIH

Intel mode; Input high

AMD mode; Input high

0.8

1.35

VID_SEL

VID_SEL threshold

(Intel mode)

Input low

Input high

0.8

0.3

VID_SEL pull-up current

VIDSEL to SGND

12.5

μA

Error amplifier

EA DC gain

EA slew rate

COMP = 10 pF to SGND

μs

Differential current sensing and offset

ICSx+

Bias current

Inductor sense

μA

Current sense mismatch

Rg = 1 k

Ω; I

INFOx = 25 μA-3

VOCTH

Over current threshold

VOCSET (OCP)

1.215

1.240

1.265

KIOCSET

OCSET current accuracy

Rg = 1 k

2-PHASE, IOCSET = 60 μA;

3-PHASE, IOCSET = 90 μA;

-5

kIDROOP

Droop current deviation from

nominal value

Rg = 1k

2-PHASE, IDROOP = 0 to 40 μA;

3-PHASE, IDROOP = 0 to 60 μA;

-1

μA

IOFFSET

Offset current

VSEN = 0.500 V to 1.600 V

100

110

μA

Gate driver

tRISE_UGATEx HS rise time

BOOTx - PHASEx = 10 V;

CUGATEx to PHASEx = 3.3 nF

IUGATEx

HS source current

BOOTx - PHASEx = 10 V

RUGATEx

HS sink resistance

BOOTx - PHASEx = 12 V

1.5

2.5

Table 5.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

INFOx

AVG

–

AVG

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L6713ATR Datasheet(PDF) 14 Page - STMicroelectronics

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