STA680Q datasheet(39/43 Pages) STMICROELECTRONICS

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STA680

Electrical specifications

39/43

Vesd

Electrostatic discharge voltage

Human Body Model

2000

Machine Model

200

Charge device Model

500

Ilatchup

Injection current

Maximum operating

junction temperature

125

°C

100

VDD_RAM_IO

SDRAM IO supply voltage

3.0

3.3

3.6

Iil_ram

Low level input leakage

current(1)

Vi = 0V

µA

Iih_ram

High level input leakage

current(1)

Vi = VDD_RAM_IO

µA

Ilpu_ram

High level input leakage

current on pull up(3)

Vi = VDD_RAM_IO

µA

Ilpd_ram

Low level input leakage

current on pull-down(4)

Vi = 0V

µA

Ipu_ram

Pull-up current

Vi = 0V

122

µA

Ipd_ram

Pull-down current

Vi = VDD_RAM_IO

122

µA

Rpu_ram

Equivalent pull-up

resistance(5)

Vi = 0V

Rpd_ram

Equivalent pull-down

resistance(6)

Vi = VDD_RAM_IO

103

Vil_ram

Low level input voltage

0.8

Vih

_ram

High level input voltage

Vhyst_ram

Schmitt trigger hysteresis

300

800

Voh_ram

High level output voltage

Ioh = -XmA(7)

VDD_R

AM_IO

0.3

Vol_ram

Low level output voltage

Iol =XmA(7)

0.3

Performed on all the input pins excluded the pull-down and pull-up ones.

VDD_GEN_IO may be VDD_FHS_IO or VDD_GEN_IO depending on interface considered.

Performed only on the Input pins with pull up.

Performed only on the Input pins with pull down.

Guaranteed by Ipu measurements.

Guaranteed by Ipd measurements.

XmA = 4mA for a BD4, 8mA for BD8 pad type.

Table 22.

DC electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

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