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STP45N10 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP45N10
Description  N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP45N10 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 50 V
ID = 22.5
A
RG = 4.7
Ω
VGS = 10 V
25
75
35
105
ns
ns
(di/dt)on
Turn-on Current Slope
VDD = 80 V
ID = 45 A
RG = 47
Ω
VGS = 10 V
400
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 80 V
ID =45 A
VGS = 10 V
120
20
50
170
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 80 V
ID = 45 A
RG = 4.7
Ω
VGS = 10 V
30
35
65
45
50
95
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
45
180
A
A
VSD (
∗)
Forward On Voltage
ISD = 45 A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 45 A
di/dt = 100 A/
µs
VDD = 30 V
Tj = 150
oC
200
0.14
14
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
STP45N10/FI
3/10



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