STP50N06 datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)

Turn-on Time

Rise Time

VDD =25 V

ID =25 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

110

160

(di/dt) on

Turn-on Current Slope

VDD =40 V

ID =50 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 5)

460

µs

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =40 V

ID =50 A

VGS =10 V

SWITCHING OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

tr(Voff)

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =40 V

ID =50 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 5)

110

160

SOURCE DRAIN DIODE

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

ISD

I SDM(

•)

Source-drain Current

(pulsed)

200

VSD (

∗)

Forward On Volt age

ISD =50 A

VGS =0

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 50 A

di/dt = 100 A/

µs

VDD =30 V

Tj =150

(see test circuit, figure 5)

150

0.45

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Areas For TO-220

Safe Operating Areas For ISOWATT220

STP50N06/FI

3/10

STP50N06 Datasheet(PDF) 3 Page - STMicroelectronics

STP50N06 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL