STP50NE10L datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay T ime

Rise Time

VDD =50 V

ID =25 A

RG =4.7

Ω

VGS =5 V

(Resistive Load, see fig. 3)

105

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =80 V ID =50 A VGS =5 V

105

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay T ime

Fall T ime

VDD =50 V

ID =25 A

RG =4.7

Ω

VGS =5 V

(Resistive Load, see fig. 3)

135

tr(Voff)

Off -volt age Rise T ime

Fall T ime

Cross-over Time

Vclamp =80 V

ID =50 A

RG =

4.7 Ω

V GS =5 V

(Induct ive Load, see fig. 5)

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

200

VSD (

∗)Forward On Voltage

ISD =50 A

VGS =0

1. 5

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 30 A

di/dt = 100 A/

µs

VDD =50 V

Tj =150

(see t est circuit, f ig. 5)

165

870

10.5

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STP50NE10L

3/8

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