STP60NE10FP datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STP60NE10FP

Description	N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP60NE10

STP60NE10FP

N - CHANNEL 100V - 0.016

Ω - 60A TO-220/TO-220FP

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.016

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP60NE10

STP60NE10FP

VDS

Drain-source Volt age (VGS = 0)

100

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)

100

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC60

30

A

ID

Drain Current (continuous) at Tc =100

oC42

21

A

IDM (

•)

Drain Current (pulsed)

240

120

A

Ptot

Tot al Dissipation at Tc =25

oC

160

50

W

Derating F act or

1.06

0.37

W /

o C

VISO

Insulation Withstand Voltage (DC)



2000

V

dv/dt

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STP60NE10

STP60NE10FP

100 V

<0.022

Ω

<0.022

Ω

60 A

30 A

May 1999

TO-220

TO-220FP

1

2

3

1

2

3

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