Electronic Components Datasheet Search
  British  ▼
ALLDATASHEET.CO.UK

X  

Preview PDF HTML

STP60NF06 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP60NF06
Description  N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET™ POWER MOSFET
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP60NF06 Datasheet(HTML) 3 Page - STMicroelectronics

  STP60NF06 Datasheet HTML 1Page - STMicroelectronics STP60NF06 Datasheet HTML 2Page - STMicroelectronics STP60NF06 Datasheet HTML 3Page - STMicroelectronics STP60NF06 Datasheet HTML 4Page - STMicroelectronics STP60NF06 Datasheet HTML 5Page - STMicroelectronics STP60NF06 Datasheet HTML 6Page - STMicroelectronics STP60NF06 Datasheet HTML 7Page - STMicroelectronics STP60NF06 Datasheet HTML 8Page - STMicroelectronics STP60NF06 Datasheet HTML 9Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 3 / 9 page
background image
3/9
STP60NF06 - STP60NF06FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 30 V, ID = 30 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
16
ns
tr
Rise Time
108
ns
Qg
Total Gate Charge
VDD = 48V, ID =60A,VGS = 10V
49
66
nC
Qgs
Gate-Source Charge
18
nC
Qgd
Gate-Drain Charge
14
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 30 V, ID = 30 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
43
20
ns
ns
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =48V, ID = 60 A
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
40
12
21
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
60
A
ISDM (2)
Source-drain Current (pulsed)
240
A
VSD (1)
Forward On Voltage
ISD = 60 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60 A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
73
182
5
ns
nC
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220



Html Pages

1 2 3 4 5 6 7 8 9


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com