STP60NS04Z datasheet(3/8 Pages) STMICROELECTRONICS

Part #	STP60NS04Z

Description	N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =16 V

ID =60 A

VGS =10 V

100

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off -volt age Rise T ime

Fall T ime

Cross-over Time

VCLAMP =30 V

ID =60 A

RG =4.7

Ω VGS =10 V

(see t est circuit, f igure 5)

110

150

200

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

240

VSD (

∗)Forward On Voltage

ISD =60 A

VGS =0

1. 5

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 60 A

di/ dt = 100 A/

µs

Vr =25 V

Tj = 150

(see t est circuit, f igure 5)

0.15

4.5

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STP60NS04Z

3/8

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