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STP6LNC60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP6LNC60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  1/9 October 2001 STP6LNC60 STP6LNC60FP N-CHANNEL 600V - 1 Ω - 5.8A TO-220/TO-220FP PowerMesh™II MOSFET (1)ISD ≤5.8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. INTERNAL SCHEMATIC DIAGRAM s TYPICAL RDS(on) = 1.0 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed TYPE VDSS RDS(on) ID STP6LNC60 STP6LNC60FP 600 V 600 V < 1.25 Ω < 1.25 Ω 5.8 A 5.8 A Symbol Parameter Value Unit STP6LNC60 STP6LNC60FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 5.8 5.8 (*) A ID Drain Current (continuos) at TC = 100°C 3.65 3.65 (*) A IDM (q) Drain Current (pulsed) 23.2 23.2 (*) A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature TO-220 TO-220FP 1 2 3 |
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