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2STW4466 Datasheet(PDF) 1 Page - STMicroelectronics |
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2STW4466 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  September 2008 Rev 2 1/9 9 2STW4466 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 80 V ■ Complementary to 2STW1693 ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Table 1. Device summary Figure 1. Internal schematic diagram TO-247 1 2 3 Order code Marking Package Packaging 2STW4466 2STW4466 TO-247 Tube www.st.com |
Similar Part No. - 2STW4466_08 |
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Similar Description - 2STW4466_08 |
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