MMG3003NT1

1

RF Device Data

Freescale Semiconductor

MMG3003NT1

40-3600 MHz, 20 dB

24 dBm

InGaP HBT

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

Broadband High Linearity Amplifier

The MMG3003NT1 is a General Purpose Amplifier that is internally

input matched and internally output prematched. It is designed for a broad

range of Class A, small -signal, high linearity, general purpose applica-

tions. It is suitable for applications with frequencies from 40 to 3600 MHz

such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and

general small-signal RF.

Features

• Frequency: 40-3600 MHz

• P1dB: 24 dBm @ 900 MHz

• Small-Signal Gain: 20 dB @ 900 MHz

• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

• Single Voltage Supply

• Internally Matched to 50 Ohms

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

1 2

3

CASE 1514-02, STYLE 1

SOT-89

PLASTIC

Characteristic

Symbol

900

MHz

2140

MHz

3500

MHz

Unit

Small -Signal Gain

(S21)

20

16.9

12

dB

Input Return Loss

(S11)

IRL

-15

-14.1

-11.2

dB

Output Return Loss

(S22)

ORL

-9.3

−14.5

-10.2

dB

Power Output @1dB

Compression

P1db

24

23.3

20.5

dBm

Third Order Output

Intercept Point

IP3

40.5

40

37

dBm

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

7

V

Supply Current

400

mA

RF Input Power

15

dBm

Storage Temperature Range

-65 to +150

°C

150

°C

2. For reliable operation, the junction temperature should not

exceed 150°C.

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

31.6

°C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MMG3003NT1

Rev. 7, 3/2008

Freescale Semiconductor

Technical Data

© Freescale Semiconductor, Inc., 2004-2008. All rights reserved.