2SC1775AFTZ datasheet(2/6 Pages) RENESAS

Part #	2SC1775AFTZ

Description	Silicon NPN Epitaxial

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 6 page

2SC1775A

Rev.3.00 Mar 03, 2006 page 2 of 5

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

voltage

V(BR)CEO

120

—

IC = 1 mA, RBE =

∞

Collector cutoff current

ICBO

—

0.5

µA

VCB = 100 V, IE = 0

hFE1*

400

—

1200

VCE = 12 V, IC = 2 mA

DC current transfer ratio

hFE2

160

—

VCE = 12 V, IC = 0.1 mA

Base to emitter voltage

VBE

—

0.75

VCE = 12 V, IC = 2 mA

Collector to emitter saturation

voltage

VCE(sat)

—

0.5

IC = 10 mA, IB = 1 mA

Gain bandwidth product

—

200

—

MHz

VCE = 12 V, IC = 2 mA

Collector output capacitance

Cob

—

1.6

—

VCB = 25 V, IE = 0, f = 1 MHz

—

5.0

f = 10 Hz

Noise figure

—

1.5

VCE = 6 V, IC = 50

µA,

Rg = 50 k

Ω

f = 1 kHz

Note:

1. The 2SC1775A is grouped by hFE1 as follows.

400 to 800

600 to 1200

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