STS5DNF20V datasheet(2/8 Pages) STMICROELECTRONICS

Part #	STS5DNF20V

Description	N-CHANNEL 20V - 0.030 ohm - 5A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 8 page

STS5DNF20V

2/8

THERMAL DATA

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (*)

DYNAMIC

Rthj-amb

Tstg

Thermal Resistance Junction-ambient Single Operation

Thermal Resistance Junction-ambient Dual Operation

Max. Operating Junction Temperature

Storage Temperature

Max

62.5

-55 to 150

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 12V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

0.6

RDS(on)

Static Drain-source On

Resistance

VGS = 4.5 V

ID = 2.5 A

VGS = 2.7 V

ID = 2.5 A

0.030

0.037

0.040

0.045

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS=15 V

ID = 2.5 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 15V f = 1 MHz, VGS = 0

460

200

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