STS9NF30L datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STS9NF30L

Description	N-CHANNEL 30V - 0.015 ohm - 9A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

PDF	6 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STS9NF30L

N-CHANNEL 30V - 0.015

Ω - 9A SO-8

LOW GATE CHARGE STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.018

Ω @ 4.5V

s

TYPICAL Qg = 9 nC @ 4.5V

s

OPTIMAL RDS(on) xQg TRADE-OFF

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique ”Single

Feature Size

™” strip-based process. The resul-

ting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND

OPTIMISED FOR HIGH EFFICIENCY CPU

CORE DC/DC CONVERTERS FOR MOBILE

PCs

®

INTERNAL SCHEMATIC DIAGRAM

May 2000

SO-8

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Un it

VDS

Drain-source Volt age (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

G ate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

oC

Drain Current (continuous) at Tc =100

oC

9

5.6

A

IDM(

•)

Drain Current (pulsed)

36

A

Ptot

T otal Dissipation at Tc =25

oC

2.5

W

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STS9NF 30L

30 V

< 0.020

Ω

9A

1/6

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