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STT3PF30L Datasheet(PDF) 3 Page - STMicroelectronics |
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STT3PF30L Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 3/8 STT3PF30L SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 1.5 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 14.5 37 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 24V ID= 3A VGS=4.5V (see test circuit, Figure 2) 4.8 1.7 2 7nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V ID = 1.5 A RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 90 23 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 3 12 A A VSD (*) Forward On Voltage ISD = 3 A VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A di/dt = 100A/µs VDD = 15 V Tj = 150°C (see test circuit, Figure 3) 35 25 1.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
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