HAT2016R

Rev.10.00 Sep 07, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

30

V

Gate to source voltage

±20

V

Drain current

6.5

A

Drain peak current

Note 1

52

A

Body-drain diode reverse drain current

6.5

A

Channel dissipation

Pch

Note 2

2

W

Channel dissipation

Pch

Note 3

3

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. 1 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

3. 2 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

30

—

—

V

Gate to source breakdown voltage

±20

—

—

V

Gate to source leak current

—

—

±10

µA

Zero gate voltage drain current

—

—

10

µA

Gate to source cutoff voltage

1.0

—

2.0

V

—

0.03

0.045

Ω

Note 4

Static drain to source on state resistance

—

0.05

0.08

Ω

Note 4

Forward transfer admittance

5

8

—

S

Note 4

Input capacitance

Ciss

—

560

—

pF

Output capacitance

Coss

—

380

—

pF

Reverse transfer capacitance

Crss

—

170

—

pF

f = 1 MHz

Turn-on delay time

—

30

—

ns

Rise time

—

270

—

ns

Turn-off delay time

—

40

—

ns

Fall time

—

65

—

ns

≅ 10 V

Body-drain diode forward voltage

—

0.9

1.4

V

Note 4

Body-drain diode reverse recovery time

—

45

—

ns

µs

Note:

4. Pulse test