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HD64F2149YV Datasheet(PDF) 833 Page - Renesas Technology Corp |
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HD64F2149YV Datasheet(HTML) 833 Page - Renesas Technology Corp |
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833 / 1075 page ![]() Section 25 Electrical Characteristics Rev. 3.00 Jan 18, 2006 page 805 of 1044 REJ09B0280-0300 25.6 Flash Memory Characteristics Table 25.15 shows the flash memory characteristics. Table 25.15 Flash Memory Characteristics Condition: V CC = 3.0 V to 3.6 V, VSS = 0 V, Ta = –20 to +75°C Item Symbol Min Typ Max Unit Test Condition Programming time* 1 *2 *4 tP — 10 200 ms/ 128 bytes Erase time* 1 *3 *6 tE — 100 1200 ms/block Reprogramming count N WEC 100* 8 10000* 9 — Times Data retention time* 10 t DRP 10 —— Years Programming Wait time after SWE-bit setting* 1 x1 —— µs Wait time after PSU-bit setting* 1 y50 —— µs z1 28 30 32 µs 1 ≤ n ≤ 6 z2 198 200 202 µs 7 ≤ n ≤ 1000 Wait time after P-bit setting* 1 *4 z3 8 10 12 µs additional write Wait time after P-bit clear* 1 α 5 —— µs Wait time after PSU-bit clear* 1 β 5 —— µs Wait time after PV-bit setting* 1 γ 4 —— µs Wait time after dummy write* 1 ε 2 —— µs Wait time after PV-bit clear* 1 η 2 —— µs Wait time after SWE-bit clear* 1 θ 100 —— µs Maximum programming count* 1 *4 *5 N —— 1000 Times Erase Wait time after SWE-bit setting* 1 x1 —— µs Wait time after ESU-bit setting* 1 y 100 —— µs Wait time after E-bit setting* 1 *6 z10 — 100 ms Wait time after E-bit clear* 1 α 10 —— µs Wait time after ESU-bit clear* 1 β 10 —— µs Wait time after EV-bit setting* 1 γ 20 —— µs Wait time after dummy write* 1 ε 2 —— µs Wait time after EV-bit clear* 1 η 4 —— µs Wait time after SWE-bit clear * 1 θ 100 —— µs Maximum erase count* 1 *6 *7 N —— 120 Times Notes: 1. Set the times according to the program/erase algorithms. 2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1 is set. It does not include the programming verification time.) |
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