Electronic Components Datasheet Search
  British  ▼
ALLDATASHEET.CO.UK

X  

HD64F2149YV Datasheet(PDF) 833 Page - Renesas Technology Corp

Part # HD64F2149YV
Description  Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2100 Series
PDF  1075 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HD64F2149YV Datasheet(HTML) 833 Page - Renesas Technology Corp

Back Button HD64F2149YV Datasheet HTML 829Page - Renesas Technology Corp HD64F2149YV Datasheet HTML 830Page - Renesas Technology Corp HD64F2149YV Datasheet HTML 831Page - Renesas Technology Corp HD64F2149YV Datasheet HTML 832Page - Renesas Technology Corp HD64F2149YV Datasheet HTML 833Page - Renesas Technology Corp HD64F2149YV Datasheet HTML 834Page - Renesas Technology Corp HD64F2149YV Datasheet HTML 835Page - Renesas Technology Corp HD64F2149YV Datasheet HTML 836Page - Renesas Technology Corp HD64F2149YV Datasheet HTML 837Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 833 / 1075 page
background image
Section 25 Electrical Characteristics
Rev. 3.00 Jan 18, 2006 page 805 of 1044
REJ09B0280-0300
25.6
Flash Memory Characteristics
Table 25.15 shows the flash memory characteristics.
Table 25.15 Flash Memory Characteristics
Condition:
V
CC = 3.0 V to 3.6 V, VSS = 0 V, Ta = –20 to +75°C
Item
Symbol
Min
Typ
Max
Unit
Test
Condition
Programming time*
1
*2 *4
tP
—
10
200
ms/
128 bytes
Erase time*
1
*3 *6
tE
—
100
1200
ms/block
Reprogramming count
N
WEC
100*
8
10000*
9
—
Times
Data retention time*
10
t
DRP
10
——
Years
Programming Wait time after SWE-bit setting*
1
x1
——
µs
Wait time after PSU-bit setting*
1
y50
——
µs
z1
28
30
32
µs
1
≤ n ≤ 6
z2
198
200
202
µs
7
≤ n ≤ 1000
Wait time after P-bit setting*
1
*4
z3
8
10
12
µs
additional
write
Wait time after P-bit clear*
1
α
5
——
µs
Wait time after PSU-bit clear*
1
β
5
——
µs
Wait time after PV-bit setting*
1
γ
4
——
µs
Wait time after dummy write*
1
ε
2
——
µs
Wait time after PV-bit clear*
1
η
2
——
µs
Wait time after SWE-bit clear*
1
θ
100
——
µs
Maximum programming
count*
1
*4 *5
N
——
1000
Times
Erase
Wait time after SWE-bit setting*
1
x1
——
µs
Wait time after ESU-bit setting*
1
y
100
——
µs
Wait time after E-bit setting*
1
*6
z10
—
100
ms
Wait time after E-bit clear*
1
α
10
——
µs
Wait time after ESU-bit clear*
1
β
10
——
µs
Wait time after EV-bit setting*
1
γ
20
——
µs
Wait time after dummy write*
1
ε
2
——
µs
Wait time after EV-bit clear*
1
η
4
——
µs
Wait time after SWE-bit clear *
1
θ
100
——
µs
Maximum erase count*
1
*6 *7
N
——
120
Times
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1
is set. It does not include the programming verification time.)



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com