HD64F2149YV datasheet(834/1075 Pages) RENESAS

834 / 1075 page

Section 25 Electrical Characteristics

Rev. 3.00 Jan 18, 2006 page 806 of 1044

REJ09B0280-0300

3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does

not include the erase verification time.)

4. Maximum programming time (tP (max))

tP (max) = (wait time after P-bit setting (z1) + (z3))

× 6

+ wait time after P-bit setting (z2)

× ((N) – 6)

5. The maximun number of writes (N) should be set according to the actual set value of

z1, z2 and z3 to allow programming within the maximum programming time (tP (max)).

The wait time after P-bit setting (z1,z2, and z3) should be alternated according to the

number of writes (n) as follows:

≤ n≤ 6

z1 = 30µs, z3 = 10µs

≤ n ≤ 1000

z2 = 200µs

6. Maximum erase time (tE (max))

tE (max) = Wait time after E-bit setting (z)

× maximum erase count (N)

7. The maximum number of erases (N) should be set according to the actual set value of z

to allow erasing within the maximum erase time (tE (max)).

8. Minimum number of times for which all characteristics are guaranteed after rewriting

(Guarantee range is 1 to minimum value).

9. Reference value for 25

°C (as a guideline, rewriting should normally function up to this

value).

10. Data retention characteristic when rewriting is performed within the specification range,

including the minimum value.

HD64F2149YV Datasheet(PDF) 834 Page - Renesas Technology Corp