H8SXSLASH1663 datasheet(1137/1158 Pages) RENESAS

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Section 25 Electrical Characteristics

Rev.1.00 Jun. 07, 2006 Page 1085 of 1102

REJ09B0294-0100

25.7

Flash Memory Characteristics

25.7.1

H8SX/1663

Table 25.12 Flash Memory Characteristics

Conditions: V

CC = PLLVCC = DrVCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, Vref = 3.0 V to AVCC,

SS = PLLVSS = DrVSS = AVSS = 0 V,

Operating temperature range during programming/erasing:

a = 0°C to +75°C (regular specifications),

a = 0°C to +85°C (wide-range specifications)

Item

Symbol

Min.

Typ.

Max.

Unit

Test

Conditions

Programming time*

1, *2, *4



ms/128 bytes

Erasure time*

1, *2, *4



160

800

ms/4-kbyte

block



1000

5000

ms/32-kbyte

block



2000

10000

ms/64-kbyte

block

Programming time

(total)*

1, *2, *4



s/384 kbytes

a = 25°C,

for all 0s

Erasure time (total)*

1, *2, *4



s/384 kbytes

a = 25°C

Programming, Erasure

time (total)*

1, *2, *4

tPE



s/384 kbytes

a = 25°C

Overwrite count

WEC

100*



times

Data save time*

DRP



years

Notes: 1. Programming time and erase time depend on data in the flash memory.

2. Programming time and erase time do not include time for data transfer.

3. All the characteristics after programming are guaranteed within this value (guaranteed

value is from 1 to Min. value).

4. Characteristics when programming is performed within the Min. value

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