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H8SX/1663R Datasheet(PDF) 1137 Page - Renesas Technology Corp |
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H8SX/1663R Datasheet(HTML) 1137 Page - Renesas Technology Corp |
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1137 / 1504 page ![]() Section 25 Flash Memory Rev. 2.00 Sep. 24, 2008 Page 1105 of 1468 REJ09B0412-0200 Section 25 Flash Memory The flash memory has the following features. Figure 25.1 is a block diagram of the flash memory. 25.1 Features • ROM size Product Classification ROM Size ROM Address H8SX/1663 R5F61663R R5F61663M 384 Kbytes H'000000 to H'05FFFF (modes 1, 2, 3, 6, and 7) H8SX/1664 R5F61664R R5F61664M 512 Kbytes H'000000 to H'07FFFF (modes 1, 2, 3, 6, and 7) H8SX/1668 R5F61668R R5F61668M 1 Mbyte H'000000 to H'0FFFFF (modes 1, 2, 3, 6, and 7) • Two memory MATs The start addresses of two memory spaces (memory MATs) are allocated to the same address. The mode setting in the initiation determines which memory MAT is initiated first. The memory MATs can be switched by using the bank-switching method after initiation. User MAT initiated at a reset in user mode: 384 Kbytes/512 Kbytes/1 Mbyte User boot MAT is initiated at reset in user boot mode: 16 Kbytes • Programming/erasing interface by the download of on-chip program This LSI has a programming/erasing program. After downloading this program to the on-chip RAM, programming/erasure can be performed by setting the parameters. • Programming/erasing time Programming time: 1 ms (typ.) for 128-byte simultaneous programming Erasing time: 600 ms (typ.) per 1 block (64 Kbytes) • Number of programming The number of programming can be up to 100 times at the minimum. (1 to 100 times are guaranteed.) • Three on-board programming modes SCI Boot mode: Using the on-chip SCI_4, the user MAT and user boot MAT can be programmed/erased. In SCI boot mode, the bit rate between the host and this LSI can be adjusted automatically. USB boot mode: Using the on-chip USB, the user MAT can be programmed/erased. |
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