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H8SX/1663R Datasheet(PDF) 1474 Page - Renesas Technology Corp |
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H8SX/1663R Datasheet(HTML) 1474 Page - Renesas Technology Corp |
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1474 / 1504 page ![]() Main Revisions and Additions in this Edition Rev. 2.00 Sep. 24, 2008 Page 1442 of 1468 REJ09B0412-0200 Item Page Revision (See Manual for Details) Section 25 Flash Memory 25.7.1 Programming/Erasing Interface Registers 1120 Added Bit 0 R/W* Note: This is a write-only bit. This bit is always read as 0. 25.7.2 Programming/Erasing Interface Parameters (3) Flash Program/Erase Frequency Parameter (FPEFEQ) 1132 Amended FPEFEQ sets the operating frequency of the CPU. The operating frequency available in this LSI ranges from 8 MHz to 50 MHz. Amended 5. Do not turn off the Vcc power supply nor remove the chip from the PROM programmer during programming/erasure in which a high voltage is applied to the flash memory. Doing so may damage the flash memory permanently. If a reset is input, the reset must be released after the reset input period of at least 100µs. 25.14 Usage Notes 1203 Amended 7. At powering on the Vcc power supply, fix the RES pin to low and set the flash memory to hardware protection state. This power on timing must also be satisfied at a power-off and power-on caused by a power failure and other factors. Section 26 Boundary Scan 26.4.3 Boundary Scan Register (JTBSR) 1210 Amended Table 26.4 Table item "from TDI" is added. "from TDI" and "to TDO" are deleted from the pin name of the table item Section 27 Clock Pulse Generator 27.6.1 Notes on Clock Pulse Generator 1231 Amended Item numbers 1 to 5 are added 4. Note that the frequency of f will be changed in the middle of a bus cycle when setting SCKCR0 or SUBCKCR while executing the external bus cycle with the write-data-buffer function and EXDMAC Section 28 Power-Down Modes 28.2 Register Descriptions 1239 Amended • Deep standby backup register n (DPSBKRn) (n=15 to 0) |
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