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H8SX/1663M Datasheet(PDF) 1419 Page - Renesas Technology Corp |
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H8SX/1663M Datasheet(HTML) 1419 Page - Renesas Technology Corp |
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1419 / 1504 page  Section 30 Electrical Characteristics Rev. 2.00 Sep. 24, 2008 Page 1387 of 1468 REJ09B0412-0200 Tp tAD tAS3 tAH1 tCSD2 tPCH2 tAC1 tOED1 tOED1 tAA3 tAC4 tWCS1 tWCH1 tWRD2 tWRD2 tWDD tWDS1 tWDH2 tRDS2 tRDH2 tCSD3 tCASW1 tAD B φ A23 to A0 RAS LUCAS, LLCAS OE, RD WE D15 to D0 OE, RD WE D15 to D0 AS Tr Tc1 Tc2 Read Write Note: Timming of DACK when DDS = 0 and EDDS = 0 Timming of RAS when RAST = 0 BS RD/ WR RD/ WR tRWD (DKC = 0) DACK3 to DACK0 (DKC = 1) DACK3 to DACK0 tRWD tRWD tBSD tBSD tDACD1 tDACD2 tDACD2 tDACD2 tRWD Figure 30.19 DRAM Access Timing: Two-State Access |
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